A journey of innovation, forging excellence.
Crossing technological boundaries,
Engraving every shining milestone.
DEVELOPMENT HISTORY
Development History
2021.11–2022.11
- Delivery of the 100V Si SGT MOS series
- Delivery of the 150V Si SGT MOS series
- Delivery of the 650V E‑GaN and D‑GaN series with integrated gate drivers
- Delivered a 1200V, 80mΩ SiC MOSFET G1, which has passed automotive-grade certification.
2023.05–2023.10
- Delivered a 1200V, 80mΩ SiC MOSFET, which has passed automotive-grade certification.
- Completed the R&D of the 1200V SiC MOSFET G2 product series.
- Completed the R&D of the 1700V SiC MOS G2 product series.
2024.02–2024.05
- Completed the R&D of the 2200V SiC product series.
- Completed the R&D of the 650V IGBT product series.
- Delivery of 62 mm‑size SiC MOS power modules and GX‑E2B half‑bridge modules.
- Delivery of the HPD 1200V 480A silicon carbide (SiC) power module
2024.06–2024.08
- Completed the 650V SiC MOS G1 series.
- Completed the 1200V SiC MOS G2 series.
- Completed the R&D of the 1200V IGBT product series.
- Completed the R&D of the 1200V/1500V SiC MOS G2 solid-state relay (SSR) product, 32Q.
- Completed the 18Q testing of the 1700V/2200V SiC MOS G2 solid-state relay (SSR) product.
Product Inquiry:
130 3889 3770
Email:
Headquarters Address:
18th Floor, Building B, Gaoke Jinhui Tower, High-Tech Industrial Development Zone, Xuzhou City, Jiangsu Province
Sales Center Address:
24th Floor, Building A, Phoenix Smart Valley, Xixiang Subdistrict, Bao’an District, Shenzhen, Guangdong Province
WeChat Account
Douyin
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