In adapter applications such as laptop chargers and electric‑vehicle chargers, the flyback topology has become the mainstream choice for low‑to‑medium power adapters, thanks to its simple structure, moderate cost, and inherent electrical isolation. A typical flyback architecture comprises AC input rectification and filtering, an RCD snubber, a primary‑side switching transistor, a high‑frequency transformer, and secondary‑side rectification and output filtering. Among these components, the selection of the primary‑side switching transistor and the secondary‑side rectifier directly determines the adapter’s conversion efficiency, thermal performance, and EMI characteristics.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of adapters for high voltage, high frequency, and high energy efficiency, Guangxin Chuangyu offers a synergistic solution combining SiC MOSFETs and SiC SBDs, covering the core power‑device positions in flyback topologies and delivering an energy‑efficiency leap for adapters—from “silicon‑based” to “silicon carbide.”

I. Topology Diagram Analysis: Application Locations of SiC Devices

Based on the flyback topology shown above, the application locations of SiC devices are as follows:

Topological location	Device Type	Function Description
Primary-side main switching transistor	SiC MOSFET	The on-off switching of the primary current in the control transformer enables energy transfer and voltage conversion. The ultra-fast switching speed and low conduction losses of SiC MOSFETs significantly reduce both switching losses and conduction losses.
Secondary-side rectifier diode	SiC SBD	Rectify the transformer secondary-side induced voltage into a DC output. The SiC SBD exhibits zero reverse recovery charge (Qrr≈0), significantly reducing rectification losses and EMI noise.
RCD absorption/clamping	Optional SiC SBD	Absorbs leakage inductance energy, suppresses primary-side voltage spikes, and protects the switching transistor.
Typical applications: AC INPUT → Rectifier Bridge → Input Filter → SiC MOSFET (Primary-Side Switch) → High-Frequency Transformer → SiC SBD (Secondary-Side Rectification) → Output Filter → DC OUTPUT (U+/U-)

II. The Core Value of SiC MOSFETs in Adapters

Higher Efficiency: SiC MOSFETs feature extremely low on-state resistance (Rds(on)) and gate charge (Qg), significantly reducing conduction and switching losses in flyback topologies and enabling adapters to easily meet Energy Efficiency Level 6 or Level 7 standards.

Higher Frequency: Supports switching frequencies of up to 150 kHz or higher, effectively reducing the size of transformers and filter components, thereby enabling more compact and thinner adapter designs.

Lower EMI: Excellent body-diode reverse-recovery characteristics and fast switching speeds minimize oscillations and voltage spikes during switching. Combined with the zero reverse-recovery of SiC SBDs, this results in superior EMI performance.

High-Temperature Stability: SiC materials can withstand higher junction operating temperatures (175°C+), delivering more stable and reliable performance in sealed, high-temperature environments.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Achieving the Level 6 or Level 7 energy efficiency standard is challenging.	Easily meets CET-6/CET-7 standards, with an efficiency of 94% or higher.
Frequency	Typically <65 kHz	Supports 150 kHz+, with transformer size reduced by 30%+
EMI	Requires a complex absorption circuit.	The body diode exhibits excellent characteristics, with superior EMI performance.
Temperature rise	Significant heat generation; a large heatsink is required.	Low losses, low temperature rise, and simplified heat dissipation.
Reliability	Performance degradation at high temperatures	Stable operation at 175°C+, suitable for harsh environments.

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max(mΩ)	Type (mΩ)	Max(mΩ)	Package	Product
1	GCC065N060D5EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80	-	TO-220F	SiC MOSFET
2	GCC065M090D5EB	650	N	25	17.7	0/15	2.6	-	4.6	90	120	82	-	TO-220F	SiC MOSFET
3	GCC065M100F3EB	750	N	31.9	22.6	0/18	2.6	-	4.6	100	130	98	-	TO-247-3	SiC MOSFET
4	GCC065M100D5EB	750	N	20.1	14.1	0/18	2.6	-	4.6	100	130	98	-	TO-220F	SiC MOSFET
5	GDC065M180E2FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-252	SiC MOSFET
6	GDC065M180D5FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-220F	SiC MOSFET
7	GDC065M260E2FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-252	SiC MOSFET
8	GDC065M260D5FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-220F	SiC MOSFET
9	GDC065M380E2FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-252	SiC MOSFET
10	GDC065M380D5FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-220F	SiC MOSFET
11	GDC065M480E2FC	650	N	8.8	6.8	0/15	2.7	-	3.85	437	568	406	-	TO-252	SiC MOSFET
12	GDC065M480D5FC	650	N	8.8	6.8	0/15	2.7	-	3.8	437	568	406	-	TO-220F	SiC MOSFET
13	GDC065M600E2FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-252	SiC MOSFET
14	GDC065M600D5FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-220F	SiC MOSFET
15	GCC065M1K0E2FC	650	N	6	4	0/18	2.7	-	4.5	1000	1250	773	-	TO-252	SiC MOSFET
16	GCC065M1K0D5FC	650	N	4.8	3.4	0/18	2.7	-	4.5	1000	1300	773	-	TO-220F	SiC MOSFET

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		Vth			RDS(ON) TJ= 25℃		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	Min	Type	Max	Type (mΩ)	Max(mΩ)	Package	Product
1	GDS060J600E2BC	600	N	8	5.1	2.5	3.5	4.5	528	600	TO-252	SJ MOSFET
2	GDS060J600D5BC	600	N	8	5	2.5	3.5	4.5	528	600	TO-220F	SJ MOSFET
3	GDS060J380E2BC	600	N	11	6.9	2	3	4	330	380	TO-252	SJ MOSFET
4	GDS060J380D5BC	600	N	11	6.9	2	3	4	330	380	TO-220F	SJ MOSFET
5	GDS070J380D5BC	700	N	10.6	6.7	2	3	4	340	380	TO-220F	SJ MOSFET
6	GDS060R190D5BC	600	N	20	12.6	3	4	5	165	190	TO-220F	SJ MOSFET
7	GDS060S170E2EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-252	SJ MOSFET
8	GDS060S170D5EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-220F	SJ MOSFET
9	GDS060J120D5EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-220F	SJ MOSFET
10	GDS060R090D5EC	600	N	31	20	3	4	5	86	99	TO-220F	SJ MOSFET
11	GDS060R090C2EC	600	N	31	20	3	4	5	86	99	TO-263	SJ MOSFET
12	GDS060R090T8EC	600	N	31	20	3	4	5	86	99	TOLL-8	SJ MOSFET
13	GDS060R070D5EC	600	N	44	27.7	3	4	5	63	70	TO-220F	SJ MOSFET
14	GDS065S380D5BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-220F	SJ MOSFET
15	GDS065S380E2BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-252	SJ MOSFET
16	GDS065S280E2BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-252	SJ MOSFET
17	GDS065S280D5BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-220F	SJ MOSFET
18	GDS065J190D5EC	650	N	18	11.3	2.5	3.5	4.5	169	190	TO-220F	SJ MOSFET