In the design of power supplies for flat-panel TVs, the flyback topology has become the mainstream choice for low- and medium‑power applications, thanks to its simple structure, moderate cost, and inherent electrical isolation. A typical TV power supply comprises stages such as AC input rectification and filtering, a PFC stage, a primary‑side switching transistor, a high‑frequency transformer, and secondary‑side rectification and output filtering. It must simultaneously deliver a main‑voltage output (12 V/24 V, for the motherboard and backlight system) and a standby voltage output (5 V, for MCU control). Among these components, the selection of the primary‑side switching transistor and the secondary‑side rectifier directly impacts the power supply’s conversion efficiency, thermal performance, and standby power consumption.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of TV power supplies for high efficiency, high reliability, and low standby power consumption, Guangxin Chuangyu offers a synergistic SiC MOSFET–SiC SBD solution that covers the core power‑device positions in TV power supplies, helping to achieve higher efficiency, a more compact footprint, and longer service life.

I. Topology Diagram Analysis: Application Locations of SiC Devices

Based on the TV power‑supply topology shown above, the SiC devices are implemented at the following locations:

Topological location	Device Type	Function Description
PFC-class switching transistor	SiC MOSFET	Power factor correction reduces input current harmonics and complies with harmonic current limit standards.
PFC-class boost diode	SiC SBD	Zero reverse recovery, reducing switching losses and EMI noise in the PFC stage.
Primary-side main switching transistor	SiC MOSFET	By switching the primary current of the control transformer on and off, energy transfer and voltage conversion are achieved; the ultra‑fast switching speed of SiC MOSFETs significantly reduces switching losses.
Main output secondary-side rectifier diode	SiC SBD (The figure shows a standard diode; upgrading is recommended)	The secondary-side induced voltage of the transformer is rectified to produce a 12 V/24 V main output, and the zero reverse-recovery characteristics of the SiC SBD significantly reduce rectification losses.
Standby output secondary-side rectifier diode	SiC SBD (The figure shows a standard diode; upgrading is recommended)	Standby 5V output rectification reduces standby power consumption and meets energy efficiency standards.
Output-side linear regulator (78LXX)	—	Stabilize the standby voltage at 5 V for MCU use (the original scheme can be retained).
Typical applications: AC INPUT → Rectifier Bridge → PFC Stage (SiC MOSFET + SiC SBD) → High-Voltage Bus → Flyback Primary Side (SiC MOSFET) → High-Frequency Transformer → Secondary-Side Rectification (SiC SBD) → 12V/24V Main Output (SYSTEM) + 5V Standby Output (MCU)

II. The Core Value of SiC Devices in TV Power Supplies

Higher Efficiency: The SiC MOSFET’s extremely low on‑resistance and gate charge, combined with the SiC SBD’s zero reverse recovery, significantly reduce losses in the PFC stage, the primary‑side switching stage, and the secondary‑side rectification stage, thereby improving overall power‑supply efficiency and helping meet energy‑efficiency standards.

Lower Standby Power Consumption: The zero reverse recovery characteristics of SiC SBDs effectively reduce rectification losses in standby mode, and when combined with an optimized standby control strategy, help TV power supplies meet stringent standby power‑consumption standards (<0.5 W).

Higher power density: Supports higher switching frequencies, effectively reducing the size of transformers, inductors, and output filter capacitors, enabling ultra-thin, compact TV power‑supply designs that fit the tight spaces of flat‑panel TVs.

Lower EMI: The zero reverse recovery characteristics of SiC SBDs significantly reduce switching ringing and high-frequency noise. Combined with the fast switching of SiC MOSFETs, this delivers superior EMI performance and simplifies filter circuit design.

Longer lifespan: SiC materials can withstand higher junction operating temperatures (175°C+), delivering more stable performance in the high‑temperature, enclosed environment of TV power supplies and extending the overall service life of the television.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solutions	Guangxin Chuangyu SiC Solution
Efficiency	Efficiency improvements are difficult, and losses are significant.	Efficiency can exceed 94%, significantly reducing power consumption.
Standby power consumption	Standby power consumption is relatively high.	SiC SBDs feature zero reverse recovery, resulting in lower standby power consumption.
Frequency	Typically <65 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	SiC SBDs exhibit zero reverse recovery, resulting in superior EMI performance.
Temperature rise	Significant heat generation requires a large heatsink.	Low losses, low temperature rise, and simplified heat dissipation.
Lifespan	Performance degradation at high temperatures	Stable operation at 175°C+, extending the overall machine lifespan.

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC065N020F3EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23	-	TO-247-3	SiC MOSFET
2	GCC065N020F4EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23		TO-247-4	SiC MOSFET
3	GCC065N040F3EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46		TO-247-3	SiC MOSFET
4	GCC065N040F4EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46	-	TO-247-4	SiC MOSFET
5	GCC065N060D5EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80	-	TO-220F	SiC MOSFET
6	GCC065N060F3EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80		TO-247-3	SiC MOSFET
7	GCC065M090F3EB	650	N	36	27	0/18	2.7	-	4.5	90	120	77	-	TO-247-3	SiC MOSFET
8	GCC065M090D5EB	650	N	25	17.7	0/15	2.6	-	4.6	90	120	82	-	TO-220F	SiC MOSFET
9	GCC065M100F3EB	750	N	31.9	22.6	0/18	2.6	-	4.6	100	130	98	-	TO-247-3	SiC MOSFET
10	GCC065M100D5EB	750	N	20.1	14.1	0/18	2.6	-	4.6	100	130	98	-	TO-220F	SiC MOSFET
11	GDC065M180E2FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-252	SiC MOSFET
12	GDC065M180D5FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-220F	SiC MOSFET
13	GDC065M260E2FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-252	SiC MOSFET
14	GDC065M260D5FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-220F	SiC MOSFET
15	GDC065M380E2FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-252	SiC MOSFET
16	GDC065M380D5FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-220F	SiC MOSFET
17	GDC065M480E2FC	650	N	8.8	6.8	0/15	2.7	-	3.85	437	568	406	-	TO-252	SiC MOSFET
18	GDC065M480D5FC	650	N	8.8	6.8	0/15	2.7	-	3.8	437	568	406	-	TO-220F	SiC MOSFET
19	GDC065M600E2FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-252	SiC MOSFET
20	GDC065M600D5FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-220F	SiC MOSFET
21	GCC065M1K0E2FC	650	N	6	4	0/18	2.7	-	4.5	1000	1250	773	-	TO-252	SiC MOSFET
22	GCC065M1K0D5FC	650	N	4.8	3.4	0/18	2.7	-	4.5	1000	1300	773	-	TO-220F	SiC MOSFET
23	GDC075N026F3EB	750	N	72	51	-5/18	2	2.96	4	26.2	34.1	33.6	-	TO-247-3	SiC MOSFET

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		Vth			RDS(ON) TJ= 25℃		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	Min	Type	Max	Type (mΩ)	Max(mΩ)	Package	Product
1	GDS060J600E2BC	600	N	8	5.1	2.5	3.5	4.5	528	600	TO-252	SJ MOSFET
2	GDS060J600D5BC	600	N	8	5	2.5	3.5	4.5	528	600	TO-220F	SJ MOSFET
3	GDS060J380E2BC	600	N	11	6.9	2	3	4	330	380	TO-252	SJ MOSFET
4	GDS060J380D5BC	600	N	11	6.9	2	3	4	330	380	TO-220F	SJ MOSFET
5	GDS070J380D5BC	700	N	10.6	6.7	2	3	4	340	380	TO-220F	SJ MOSFET
6	GDS060R190D5BC	600	N	20	12.6	3	4	5	165	190	TO-220F	SJ MOSFET
7	GDS060S170E2EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-252	SJ MOSFET
8	GDS060S170D5EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-220F	SJ MOSFET
9	GDS060J120D5EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-220F	SJ MOSFET
10	GDS060J120F3EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-247-3	SJ MOSFET
11	GDS060R090D5EC	600	N	31	20	3	4	5	86	99	TO-220F	SJ MOSFET
12	GDS060R090C2EC	600	N	31	20	3	4	5	86	99	TO-263	SJ MOSFET
13	GDS060R090F3EC	600	N	31	20	3	4	5	86	99	TO-247-3	SJ MOSFET
14	GDS060R090T8EC	600	N	31	20	3	4	5	86	99	TOLL-8	SJ MOSFET
15	GDS060R070D5EC	600	N	44	27.7	3	4	5	63	70	TO-220F	SJ MOSFET
16	GDS060R070F3EC	600	N	44	27.7	3	4	5	63	70	TO-247-3	SJ MOSFET
17	GDS060R038F3EC	600	N	52	32.8	3	4	5	34	38	TO-247-3	SJ MOSFET
18	GDS060R022F3EC	600	N	110	69.5	3	4	5	21	22	TO-247-3	SJ MOSFET
19	GDS065S380D5BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-220F	SJ MOSFET
20	GDS065S380E2BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-252	SJ MOSFET
21	GDS065S280E2BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-252	SJ MOSFET
22	GDS065S280D5BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-220F	SJ MOSFET
23	GDS065J190D5EC	650	N	18	11.3	2.5	3.5	4.5	169	190	TO-220F	SJ MOSFET