In high‑end PC power supplies—particularly those certified 80 PLUS Titanium or Platinum—two mainstream DC‑DC conversion topologies are the dual‑transistor forward converter and the half‑bridge LLC resonant converter. The dual‑transistor forward topology is simple and highly reliable, making it well suited for medium‑ to high‑power applications. By contrast, the half‑bridge LLC resonant topology achieves extremely low switching losses through zero‑voltage/zero‑current switching (ZVS/ZCS), making it the preferred choice for designs emphasizing high efficiency and high power density. Both topologies require the use of high‑performance power devices at the primary‑side switch and the secondary‑side rectifier positions to overcome the efficiency limitations inherent in conventional silicon‑based solutions.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of PC power supplies—high energy efficiency, high power density, and low standby power consumption—Guangxin Chuangyu offers a synergistic SiC MOSFET + SiC SBD solution that covers the critical power‑device positions in both the dual‑transistor forward converter and the half‑bridge LLC topology, helping PC power supplies easily achieve 80 PLUS Titanium certification.

I. Topology Diagram Analysis: Application Locations of SiC Devices

1. Dual-Transistor Forward Topology

Topological location	Device Type	Function Description
PFC-class switching transistor	SiC MOSFET	Power factor correction to reduce input current harmonics.
PFC-class boost diode	SiC SBD	Zero reverse recovery, reducing switching losses and EMI in the PFC stage.
Dual‑switch forward converter primary-side switching transistors (2 units)	SiC MOSFET	Controlling energy transfer on the primary side of the transformer, the ultra-fast switching speed of the SiC MOSFET significantly reduces switching losses.
Secondary-side rectifier diode	SiC SBD	Multi-output (+12V/+5V) rectification with zero reverse recovery characteristics significantly reduces rectification losses.

2. Half-Bridge LLC Resonant Topology

Topological location	Device Type	Function Description
PFC-class switching transistor	SiC MOSFET	Power factor correction to reduce input current harmonics.
PFC-class boost diode	SiC SBD	Zero reverse recovery, reducing losses and EMI in the PFC stage.
Half-bridge LLC primary-side switching transistors (2 units)	SiC MOSFET	It forms a half-bridge resonant network, and the SiC MOSFET’s excellent body-diode reverse-recovery characteristics perfectly match the ZVS soft-switching requirements of the LLC topology.
Secondary-side rectifier diode	SiC SBD	Multi‑output (+12 V/+5 V) rectification with zero reverse recovery, significantly reducing secondary‑side rectification losses.
Typical applications: AC INPUT → Rectifier Bridge → PFC Stage (SiC MOSFET + SiC SBD) → High-Voltage Bus → Dual-Transistor Forward / Half-Bridge LLC (SiC MOSFET) → High-Frequency Transformer → Secondary-Side Rectification (SiC SBD) → +12V/+5V Outputs

II. The Core Value of SiC Devices in PC Power Supplies

Higher Efficiency: The SiC MOSFET’s extremely low on‑resistance and gate charge, combined with the SiC SBD’s zero reverse recovery, significantly reduce losses in the PFC stage, the primary‑side switching stage, and the secondary‑side rectification stage, enabling PC power supplies to easily achieve 80 PLUS Titanium efficiency (94%+).

Higher power density: Supports higher switching frequencies, effectively reducing the size of the PFC inductor, LLC transformer, and output filter capacitors, thereby enabling higher power output within a constrained footprint.

Lower EMI: The zero reverse recovery characteristics of SiC SBDs significantly reduce switching ringing and high-frequency noise. Combined with the fast switching of SiC MOSFETs, this delivers superior EMI performance and simplifies filter circuit design.

Higher reliability: SiC materials can withstand higher junction temperatures (175°C+), delivering more stable performance in the enclosed, high-temperature environment of PC power supplies and extending service life.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Titanium-level certification is highly challenging.	Easily meets the 80 PLUS Titanium standard (94%+ efficiency)
Frequency	Typically <100 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	SiC SBDs exhibit zero reverse recovery, resulting in superior EMI performance.
Temperature rise	Significant heat generation; a large heatsink is required.	Low losses, low temperature rise, and simplified heat dissipation.
Reliability	Performance degradation at high temperatures	Stable operation at 175°C+, suitable for harsh environments.

Solution Topology

Model Recommendations

NO.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
NO.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC065N020F3EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23	-	TO-247-3	SiC MOSFET
2	GCC065N020F4EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23		TO-247-4	SiC MOSFET
3	GCC065N040F3EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46		TO-247-3	SiC MOSFET
4	GCC065N040F4EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46	-	TO-247-4	SiC MOSFET
5	GCC065N060D5EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80	-	TO-220F	SiC MOSFET
6	GCC065N060F3EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80		TO-247-3	SiC MOSFET
7	GCC065M090F3EB	650	N	36	27	0/18	2.7	-	4.5	90	120	77	-	TO-247-3	SiC MOSFET
8	GCC065M090D5EB	650	N	25	17.7	0/15	2.6	-	4.6	90	120	82	-	TO-220F	SiC MOSFET
9	GCC065M100F3EB	750	N	31.9	22.6	0/18	2.6	-	4.6	100	130	98	-	TO-247-3	SiC MOSFET
10	GCC065M100D5EB	750	N	20.1	14.1	0/18	2.6	-	4.6	100	130	98	-	TO-220F	SiC MOSFET
11	GDC065M180E2FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-252	SiC MOSFET
12	GDC065M180D5FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-220F	SiC MOSFET
13	GDC065M260E2FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-252	SiC MOSFET
14	GDC065M260D5FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-220F	SiC MOSFET
15	GDC065M380E2FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-252	SiC MOSFET
16	GDC065M380D5FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-220F	SiC MOSFET
17	GDC065M480E2FC	650	N	8.8	6.8	0/15	2.7	-	3.85	437	568	406	-	TO-252	SiC MOSFET
18	GDC065M480D5FC	650	N	8.8	6.8	0/15	2.7	-	3.8	437	568	406	-	TO-220F	SiC MOSFET
19	GDC065M600E2FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-252	SiC MOSFET
20	GDC065M600D5FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-220F	SiC MOSFET
21	GCC065M1K0E2FC	650	N	6	4	0/18	2.7	-	4.5	1000	1250	773	-	TO-252	SiC MOSFET
22	GCC065M1K0D5FC	650	N	4.8	3.4	0/18	2.7	-	4.5	1000	1300	773	-	TO-220F	SiC MOSFET
23	GDC075N026F3EB	750	N	72	51	-5/18	2	2.96	4	26.2	34.1	33.6	-	TO-247-3	SiC MOSFET

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		Vth			RDS(ON) TJ= 25℃		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	Min	Type	Max	Type (mΩ)	Max(mΩ)	Package	Product
1	GDS060J600E2BC	600	N	8	5.1	2.5	3.5	4.5	528	600	TO-252	SJ MOSFET
2	GDS060J600D5BC	600	N	8	5	2.5	3.5	4.5	528	600	TO-220F	SJ MOSFET
3	GDS060J380E2BC	600	N	11	6.9	2	3	4	330	380	TO-252	SJ MOSFET
4	GDS060J380D5BC	600	N	11	6.9	2	3	4	330	380	TO-220F	SJ MOSFET
5	GDS070J380D5BC	700	N	10.6	6.7	2	3	4	340	380	TO-220F	SJ MOSFET
6	GDS060R190D5BC	600	N	20	12.6	3	4	5	165	190	TO-220F	SJ MOSFET
7	GDS060S170E2EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-252	SJ MOSFET
8	GDS060S170D5EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-220F	SJ MOSFET
9	GDS060J120D5EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-220F	SJ MOSFET
10	GDS060J120F3EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-247-3	SJ MOSFET
11	GDS060R090D5EC	600	N	31	20	3	4	5	86	99	TO-220F	SJ MOSFET
12	GDS060R090C2EC	600	N	31	20	3	4	5	86	99	TO-263	SJ MOSFET
13	GDS060R090F3EC	600	N	31	20	3	4	5	86	99	TO-247-3	SJ MOSFET
14	GDS060R090T8EC	600	N	31	20	3	4	5	86	99	TOLL-8	SJ MOSFET
15	GDS060R070D5EC	600	N	44	27.7	3	4	5	63	70	TO-220F	SJ MOSFET
16	GDS060R070F3EC	600	N	44	27.7	3	4	5	63	70	TO-247-3	SJ MOSFET
17	GDS060R038F3EC	600	N	52	32.8	3	4	5	34	38	TO-247-3	SJ MOSFET
18	GDS060R022F3EC	600	N	110	69.5	3	4	5	21	22	TO-247-3	SJ MOSFET
19	GDS065S380D5BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-220F	SJ MOSFET
20	GDS065S380E2BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-252	SJ MOSFET
21	GDS065S280E2BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-252	SJ MOSFET
22	GDS065S280D5BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-220F	SJ MOSFET
23	GDS065J190D5EC	650	N	18	11.3	2.5	3.5	4.5	169	190	TO-220F	SJ MOSFET