In DC fast‑charging infrastructure for electric vehicles, the charging station’s power module serves as the core power‑conversion unit, efficiently transforming three‑phase AC grid power into a stable DC voltage required by the traction battery. A typical charging‑station power module employs a two‑stage architecture: AC‑DC (rectification plus PFC) followed by DC‑DC (isolated conversion). The front stage uses three‑phase rectification and power‑factor correction (PFC) to regulate a high‑voltage DC bus, while the rear stage provides an adjustable DC output via an isolated DC‑DC converter to charge the traction battery. In this architecture, the selection of the PFC switching devices, the primary‑side switches in the DC‑DC converter, and the secondary‑side rectifier diodes directly determines the module’s conversion efficiency, power density, and reliability.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of charging‑pile power modules—namely high power, high efficiency, and high power density—Guangxin Chuangyu offers a synergistic SiC MOSFET + SiC SBD solution that covers the critical power‑device positions in both the AC‑DC and DC‑DC stages, helping charging‑pile power modules achieve higher efficiency, smaller form factors, and longer lifetimes.

I. Topology Diagram Analysis: Application Locations of SiC Devices

Based on the power‑module topology of the charging station shown above, the SiC devices are implemented at the following locations:

Topological location	Recommended Devices	Specification Requirements	Function Description
Three-phase rectifier bridge	1200V SiC SBD	1200V/10-40A	Rectifying three-phase AC into DC, the zero reverse-recovery characteristics of SiC SBDs significantly reduce rectification losses and EMI.
PFC-class switching transistor	650V SiC MOSFET	650V/10-80mΩ	Power factor correction reduces input current harmonics, while the ultra-fast switching speed of SiC MOSFETs significantly lowers switching losses.
DC-DC primary-side switching transistor	650V SiC MOSFET	650V/10-80mΩ	It forms the primary-side full-bridge/LLC inverter circuit, converting high-voltage DC into high-frequency AC to drive the transformer’s primary side.
DC-DC secondary-side rectifier diode	650V SiC SBD	650V/10-40A	The high-frequency AC on the transformer secondary side is rectified into a DC output, and the zero reverse-recovery characteristics of the SiC SBD significantly reduce rectification losses.
Typical applications: AC INPUT (Three-phase) → Rectifier Bridge (1200V SiC SBD) → PFC Stage (650V SiC MOSFET) → High-Voltage DC Bus → Primary-Side Inverter for DC-DC Conversion (650V SiC MOSFET) → High-Frequency Transformer → Secondary-Side Rectification (650V SiC SBD) → DC OUTPUT

II. The Core Value of SiC Devices in Charging Station Power Modules

Higher Efficiency: The SiC MOSFET’s extremely low on‑resistance and gate charge, combined with the SiC SBD’s zero reverse recovery, significantly reduce losses in the rectifier stage, PFC stage, primary‑side inverter stage, and secondary‑side rectifier stage, thereby boosting overall module efficiency (up to 96%+ ) and lowering operating costs.

Higher power density: Supports higher switching frequencies, effectively reducing the size of PFC inductors, transformers, and output filter capacitors, thereby enabling compact, high‑power‑density designs for charging‑station power modules and saving floor space.

Lower EMI: The zero reverse recovery characteristics of SiC SBDs significantly reduce switching ringing and high-frequency noise. Combined with the fast switching of SiC MOSFETs, this results in improved system EMI performance and simplifies filter circuit design.

Higher reliability: SiC materials can withstand higher junction operating temperatures (175°C+), delivering more stable performance in harsh outdoor conditions such as high temperature and high humidity, thereby extending the module’s service life.

Improved system cost: High efficiency reduces thermal management requirements, while higher switching frequencies enable smaller magnetic components, thereby lowering both the bill of materials (BOM) and operational maintenance costs.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Efficiency improvements are difficult, and losses are significant.	Efficiency can exceed 96%, reducing operational costs.
Frequency	Typically <50 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	SiC SBDs exhibit zero reverse recovery, resulting in superior EMI performance.
Temperature rise	Significant heat generation requires a large heatsink.	Low losses, low temperature rise, and simplified heat dissipation.
Reliability	Performance degradation at high temperatures	Stable operation at 175°C+, suitable for harsh outdoor environments.
System cost	Heat dissipation and magnetic components are costly.	Comprehensive BOM cost reduction

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC120N010F4EB	1200	N	113	80	-5/18	2	2.7	4	14.5	19	27	-	TO-247-4	SiC MOSFET
2	GCC120N030F3EB	1200	N	55	39	-5/18	2	-	4	30	40	54	-	TO-247-3	SiC MOSFET
3	GCC120N030F4EB	1200	N	55	39	-5/18	2	-	4	30	40	54	-	TO-247-4	SiC MOSFET
4	GCC120N035F3EB	1200	N	47	33	-5/18	2	-	4	35	45	65	-	TO-247-3	SiC MOSFET
5	GCC120N035F4EB	1200	N	47	33	-5/18	2	-	4	35	45	65	-	TO-247-4	SiC MOSFET
6	GCC120N060F4EB	1200	N	34	24	-5/18	2	-	4	56	78	108	-	TO-247-4	SiC MOSFET
7	GCC120N075F3FB	1200	N	39	28	-5/18	2	-	4	58	75	104	-	TO-247-3	SiC MOSFET
8	GCC120N075F4FB	1200	N	39	28	-5/18	2	-	4	58	75	104	-	TO-247-4	SiC MOSFET
9	GCC150N020F4EB	1500	N	86	61	-5/18	2	3.3	4	20	25	36.4	-	TO-247-4	SiC MOSFET
10	GAC170N015F4EB	1700	N	153	108	-5/18	2	2.9	4	15	21	27	-	TO-247-4	SiC MOSFET
11	GYC170N1K0F3BB	1700	N	5	3.2	-5/20	2	3.1	4	1060	1350	998	1250	TO-247-3	SiC MOSFET
12	GYC170N1K0F4BB	1700	N	5	3.2	-5/20	2	3.1	4	1060	1350	2100	-	TO-247-4	SiC MOSFET
13	GYC170N019F3BB	1700	N	132	84	-5/20	2	2.75	4	19	28	46	-	TO-247-3	SiC MOSFET
14	GYC170N019F4BB	1700	N	132	84	-5/20	2	2.8	4	19	26	26	-	TO-247-4	SiC MOSFET
15	GYC170N045F3BB	1700	N	67	45	-5/20	2	2.8	4	45	70	78	-	TO-247-3	SiC MOSFET
16	GYC170N045F4BB	1700	N	67	45	-5/20	2	2.8	4	45	70	78	-	TO-247-4	SiC MOSFET
17	GYC170N075F3BB	1700	N	33	29	-5/20	2	2.9	4	75	95	186	-	TO-247-3	SiC MOSFET
18	GYC170N075F4BB	1700	N	33	29	-5/20	2	2.5	4	75	95	105	-	TO-247-4	SiC MOSFET

Model Recommendations

No.	Part No.	VRRM [V]	IF(A)	VF(V) (TJ=25℃)		VF(V) (TJ=175℃)		Package	Product
No.	Part No.	VRRM [V]	TC=110℃	Typ.	Max.	Typ.	Max.	Package	Product
1	GNC065B010D4EB	650	10	1.4	1.75	1.7	1.9	TO-220F-2	SJ MOSFET
2	GNC065B010D2EB	650	10	1.4	1.75	1.7	1.9	TO-220-2	SJ MOSFET
3	GXC065B010D1GB	650	10	1.4	1.75	1.7	1.9	Internal insulation of TO-220-2	SJ MOSFET
4	GNC065B010E2EB	650	10	1.4	1.75	1.7	1.9	TO-252	SJ MOSFET
5	GNC065B010LEB	650	10	1.5	1.8	1.8	-	DFN8×8	SJ MOSFET
6	GNC065B020D4EB	650	20	1.47	1.7	1.82	2.5	TO-220F-2	SJ MOSFET
7	GNC065B020D2EB	650	20	1.47	1.7	1.82	2.5	TO-220-2	SJ MOSFET
8	GNC065B020D1EB	650	20	1.47	1.7	1.82	2.5	Internal insulation of TO-220-2	SJ MOSFET
9	GNC065B020F2EB	650	20	1.47	1.7	1.82	2.5	TO-247-2	SJ MOSFET
10	GNC065B020F3EGB	650	20	1.33	1.7	1.64	1.8	TO-247-3	SJ MOSFET
11	GNC065B030D1EB	650	30	1.41	1.7	1.68	2	Internal insulation of TO-220-2	SJ MOSFET
12	GNC065B030F2EB	650	30	1.41	1.7	1.68	2	TO-247-2	SJ MOSFET
13	GNC065B040F2EB	650	40	1.46	1.75	1.81	-	TO-247-2	SJ MOSFET
14	GNC065B040F3EB	650	40	1.45	1.75	1.79	-	TO-247-3	SJ MOSFET
15	GNC065B050F2EB	650	50	1.47	1.7	1.80	2.5	TO-247-2	SJ MOSFET
16	GNC120B010D2GB	1200	10	1.47	1.7	2.23	2.5	TO-220-2	SJ MOSFET
17	GNC120B010F2GB	1200	10	1.47	1.7	2.23	2.5	TO-247-2	SJ MOSFET
18	GNC120B015F2GB	1200	15	1.4	1.7	1.95	2.5	TO-247-2	SJ MOSFET
19	GNC120B020F2EB	1200	20	1.45	1.8	2	-	TO-247-2	SJ MOSFET
20	GNC120B020F3EB	1200	20	1.45	1.8	2	-	TO-247-3	SJ MOSFET
21	GNC120B030F2EB	1200	30	1.42	1.8	1.96	-	TO-247-2	SJ MOSFET
22	GNC120B030F3EB	1200	30	1.45	1.8	1.95	-	TO-247-3	SJ MOSFET
23	GNC120B040F2FB	1200	40	1.45	1.75	2.05	-	TO-247-2	SJ MOSFET
24	GNC120B040F3EB	1200	40	1.45	1.8	2	-	TO-247-3	SJ MOSFET
25	GAC170B010F2EB	1700	10	1.45	1.7	2.1	-	TO-247-2	SJ MOSFET
26	GAC170B025F2EB	1700	25	1.45	1.7	2.1	-	TO-247-2	SJ MOSFET
27	GAC170B050F2EB	1700	50	1.45	1.6	1.95	2.3	TO-247-2	SJ MOSFET