Against the backdrop of rapid growth in photovoltaic‑based energy storage and residential energy storage systems, the power conversion system (PCS)—the core power‑electronics device that interfaces photovoltaic arrays, battery packs, and the grid or load—directly determines the overall performance of the energy storage system through its conversion efficiency, power density, and reliability. Depending on whether electrical isolation is provided, energy storage systems can be broadly categorized into non‑isolated and isolated topologies: non‑isolated designs offer a simpler architecture, controllable costs, and high efficiency, while isolated solutions employ high‑frequency transformers to achieve electrical isolation, delivering enhanced safety and making them well suited for applications with stringent insulation and safety‑regulation requirements. In both approaches, the core power‑conversion stage relies on high‑performance switching devices; thanks to their high‑voltage capability, high switching frequency, and low conduction losses, SiC MOSFETs have become the preferred choice for upgrading power‑device technology in energy storage systems.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of energy storage systems for high efficiency, high power density, and high reliability, Guangxin Chuangyu offers a family of SiC MOSFET products that cover the critical power‑device positions in both non‑isolated and isolated topologies, enabling higher‑efficiency, more compact, and longer‑life energy‑storage converter designs.

I. Topology Diagram Analysis: Application Locations of SiC Devices

Option 1: Energy Storage System – Non-Isolated Configuration

Topological location	Device Type	Function Description
MPPT boost-stage switching transistor	SiC MOSFET	Maximum Power Point Tracking (MPPT) for photovoltaic systems steps up the low‑voltage DC output of the PV array to a high‑voltage DC bus, while the ultra‑fast switching speed and low on‑state losses of SiC MOSFETs significantly reduce losses in the boost stage.
Busbar switch/protection conduit	SiC MOSFET	Control of busbar switching and protection, suppression of surge currents
DC-AC inverter stage switching transistors (4 units)	SiC MOSFET	It constitutes a single-phase full-bridge inverter, converting high-voltage DC into AC output; the SiC MOSFET’s fast switching and excellent body diode characteristics ensure a clean output waveform.
Output filtering stage	—	LC filtering, smoothing the inverter’s output waveform
Typical applications: PV PLANALS (MPPT) → Boost Stage (SiC MOSFET) → High-Voltage DC Bus → DC-AC Full-Bridge Inverter (SiC MOSFET ×4) → LC Filter → INVERTER Output

Option 2: Energy Storage System – Isolation Scheme

Topological location	Device Type	Function Description
MPPT boost-stage switching transistor	SiC MOSFET	Photovoltaic maximum power point tracking (MPPT) boosts the low-voltage DC output of the PV array to a high-voltage DC bus.
Busbar switch/protection conduit	SiC MOSFET	Control of busbar switching and protection, suppression of surge currents
Primary-side full-bridge inverter switching transistors (4 units)	SiC MOSFET	It constitutes the primary-side full-bridge inverter circuit, converting high-voltage DC into high-frequency AC to drive the primary side of the high-frequency transformer.
Secondary-side rectifier/inverter switching transistors (4 units)	SiC MOSFET	It constitutes a full-bridge rectifier/inverter circuit on the secondary side, converting the high-frequency AC from the transformer’s secondary winding into DC or directly outputting it as an inverter.
Output DC-AC inverter stage	—	The final-stage inverter outputs alternating current.
Typical applications: PV PLANALS (MPPT) → Boost Stage (SiC MOSFET) → High-Voltage DC Bus → Primary-Side Full-Bridge Inverter (SiC MOSFET ×4) → High-Frequency Transformer → Secondary-Side Full-Bridge Rectification/Inversion (SiC MOSFET ×4) → Output Filtering → INVERTER Output

II. The Core Value of SiC Devices in Energy Storage Systems

Higher Efficiency: The SiC MOSFET’s extremely low on‑resistance and gate charge significantly reduce losses in the MPPT boost stage, the primary‑side inverter stage, and the secondary‑side rectifier stage, thereby boosting the overall conversion efficiency of the energy storage system (up to 98%+ ) and increasing power generation revenue.

Higher power density: Supports higher switching frequencies, effectively reducing the size of inductors, transformers, and filter capacitors, thereby enabling compact, lightweight designs for energy storage inverters and minimizing installation space requirements.

Lower EMI: The SiC MOSFET’s excellent body‑diode reverse‑recovery characteristics and fast switching speed reduce oscillations and voltage spikes during switching, resulting in improved system EMI performance and simplifying filter circuit design.

Higher Reliability: SiC materials can withstand higher junction operating temperatures (175°C+), delivering more stable performance in harsh conditions such as high temperature and high humidity found in energy storage systems, thereby extending equipment service life.

Improved system cost: High efficiency reduces thermal management requirements, while higher switching frequencies enable smaller magnetic components, collectively lowering both the bill of materials (BOM) and operational maintenance costs.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Efficiency improvements are difficult, and losses are significant.	Efficiency can exceed 98%, boosting power generation revenue.
Frequency	Typically <20 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	The SiC MOSFET’s body diode exhibits excellent characteristics, with even better EMI performance.
Temperature rise	Significant heat generation, requiring a large heatsink.	Low losses, low temperature rise, and simplified heat dissipation.
Reliability	Performance degradation at high temperatures	Stable operation at 175°C+, suitable for harsh environments.
System cost	Heat dissipation and magnetic components are costly.	Comprehensive BOM cost reduction

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC065N020F3EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23	-	TO-247-3	SiC MOSFET
2	GCC065N020F4EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23		TO-247-4	SiC MOSFET
3	GCC065N040F3EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46		TO-247-3	SiC MOSFET
4	GCC065N040F4EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46	-	TO-247-4	SiC MOSFET
5	GCC065N060D5EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80	-	TO-220F	SiC MOSFET
6	GCC065N060F3EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80		TO-247-3	SiC MOSFET
7	GCC065M090F3EB	650	N	36	27	0/18	2.7	-	4.5	90	120	77	-	TO-247-3	SiC MOSFET
8	GCC065M090D5EB	650	N	25	17.7	0/15	2.6	-	4.6	90	120	82	-	TO-220F	SiC MOSFET
9	GCC065M100F3EB	750	N	31.9	22.6	0/18	2.6	-	4.6	100	130	98	-	TO-247-3	SiC MOSFET
10	GCC065M100D5EB	750	N	20.1	14.1	0/18	2.6	-	4.6	100	130	98	-	TO-220F	SiC MOSFET
11	GDC065M180E2FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-252	SiC MOSFET
12	GDC065M180D5FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-220F	SiC MOSFET
13	GDC065M260E2FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-252	SiC MOSFET
14	GDC065M260D5FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-220F	SiC MOSFET
15	GDC065M380E2FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-252	SiC MOSFET
16	GDC065M380D5FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-220F	SiC MOSFET
17	GDC065M480E2FC	650	N	8.8	6.8	0/15	2.7	-	3.85	437	568	406	-	TO-252	SiC MOSFET
18	GDC065M480D5FC	650	N	8.8	6.8	0/15	2.7	-	3.8	437	568	406	-	TO-220F	SiC MOSFET
19	GDC065M600E2FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-252	SiC MOSFET
20	GDC065M600D5FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-220F	SiC MOSFET
21	GCC065M1K0E2FC	650	N	6	4	0/18	2.7	-	4.5	1000	1250	773	-	TO-252	SiC MOSFET
22	GCC065M1K0D5FC	650	N	4.8	3.4	0/18	2.7	-	4.5	1000	1300	773	-	TO-220F	SiC MOSFET
23	GDC075N026F3EB	750	N	72	51	-5/18	2	2.96	4	26.2	34.1	33.6	-	TO-247-3	SiC MOSFET