Against the backdrop of the rapid adoption of new‑energy vehicles, on‑board inverters—key power‑electronics devices that convert the high‑voltage DC output (200 V to 800 V) from the traction battery into household AC (220 V/50 Hz or 110 V/60 Hz)—are widely used in applications such as V2L (Vehicle to Load) for outdoor power supply and powering in‑vehicle electrical equipment. A typical on‑board inverter employs a two‑stage architecture: a DC‑DC boost stage followed by a DC‑AC full‑bridge inverter. The front stage uses a push‑pull or full‑bridge topology to step up the battery’s low‑voltage DC to a high‑voltage DC bus, while the rear stage delivers clean sinusoidal AC via a full‑bridge inverter circuit. In this architecture, the selection of primary‑side switching devices and inverter bridge‑arm switches directly determines the inverter’s conversion efficiency, output waveform quality, and thermal performance.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of automotive inverters—high voltage, high frequency, and high reliability—Guangxin Chuangyu offers a family of SiC MOSFET products that cover the critical power‑device stages in both the DC‑DC boost converter and the DC‑AC inverter, helping to achieve higher efficiency, smaller form factors, and longer service life in automotive inverter designs.

I. Topology Diagram Analysis: Application Locations of SiC Devices

Based on the vehicle‑mounted inverter topology shown above, the application locations of SiC devices are as follows:

Topological location	Device Type	Function Description
Primary-side flyback/boost switching transistor	SiC MOSFET	The low-voltage DC from the power battery is stepped up to a high-voltage DC bus; the ultra-fast switching speed and low conduction losses of the SiC MOSFET significantly reduce losses in the boost stage.
Pre-stage clamping/protection switch transistor	SiC MOSFET	In conjunction with the RCD clamping circuit, it suppresses voltage spikes and protects the primary-side switching transistor.
Secondary-side rectifier diode	SiC SBD (The figure shows a standard diode; upgrading is recommended)	The secondary-side induced voltage of the transformer is rectified into high‑voltage DC, and the zero reverse‑recovery characteristics of the SiC SBD significantly reduce rectification losses.
DC-AC full-bridge inverter switching transistors (4 units)	SiC MOSFET	It forms a full-bridge inverter circuit, converting high‑voltage DC into an AC output; the SiC MOSFET’s fast switching and excellent body diode characteristics ensure a clean output waveform with low distortion.
Typical applications: Power battery (DC) → Front‑stage boost converter (SiC MOSFET) → High‑frequency transformer → Secondary‑side rectification (SiC SBD) → High‑voltage DC bus → DC‑AC full‑bridge inverter (SiC MOSFET ×4) → AC output (220 V/50 Hz)

II. The Core Value of SiC Devices in Automotive Inverters

Higher Efficiency: The SiC MOSFET’s extremely low on‑resistance and gate charge, combined with the SiC SBD’s zero reverse recovery, significantly reduce losses in the boost stage, rectification stage, and inverter stage, thereby improving overall inverter efficiency, minimizing battery energy loss, and extending driving range.

Higher power density: Supports higher switching frequencies, effectively reducing the size of transformers, inductors, and filter capacitors, thereby enabling compact, lightweight designs for automotive inverters and accommodating the tight spaces within vehicles.

Lower EMI: The SiC MOSFET’s excellent body‑diode reverse‑recovery characteristics and fast switching speed reduce oscillations and voltage spikes during switching. Combined with the zero reverse‑recovery behavior of the SiC SBD, this results in superior EMI performance and simplifies filter‑circuit design.

Higher Reliability: SiC materials can withstand higher junction temperatures (175°C+), delivering more stable performance in harsh automotive environments characterized by high temperatures and vibration, thereby extending the inverter’s service life.

Improved Output Waveform: The fast switching characteristics of the SiC MOSFET enable higher PWM frequencies, and when paired with a precise control algorithm, it can deliver a clean sinusoidal waveform with low total harmonic distortion (THD < 3%), meeting the requirements of precision electrical equipment.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Efficiency improvements are difficult, and losses are significant.	Efficiency can exceed 96%, reducing battery degradation.
Frequency	Typically <50 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	SiC SBDs exhibit zero reverse recovery, resulting in superior EMI performance.
Temperature rise	Significant heat generation requires a large heatsink.	Low losses, low temperature rise, and simplified heat dissipation.
Reliability	Performance degradation at high temperatures	Stable operation at 175°C+, suitable for harsh automotive environments.
Output waveform	High THD, waveform distortion	Supports high-frequency PWM, THD < 3%, with a clean waveform.

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC065N020F3EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23	-	TO-247-3	SiC MOSFET
2	GCC065N020F4EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23		TO-247-4	SiC MOSFET
3	GCC065N040F3EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46		TO-247-3	SiC MOSFET
4	GCC065N040F4EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46	-	TO-247-4	SiC MOSFET
5	GCC065N060D5EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80	-	TO-220F	SiC MOSFET
6	GCC065N060F3EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80		TO-247-3	SiC MOSFET
7	GCC065M090F3EB	650	N	36	27	0/18	2.7	-	4.5	90	120	77	-	TO-247-3	SiC MOSFET
8	GCC065M090D5EB	650	N	25	17.7	0/15	2.6	-	4.6	90	120	82	-	TO-220F	SiC MOSFET
9	GCC065M100F3EB	750	N	31.9	22.6	0/18	2.6	-	4.6	100	130	98	-	TO-247-3	SiC MOSFET
10	GCC065M100D5EB	750	N	20.1	14.1	0/18	2.6	-	4.6	100	130	98	-	TO-220F	SiC MOSFET
11	GDC065M180E2FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-252	SiC MOSFET
12	GDC065M180D5FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-220F	SiC MOSFET
13	GDC065M260E2FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-252	SiC MOSFET
14	GDC065M260D5FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-220F	SiC MOSFET
15	GDC065M380E2FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-252	SiC MOSFET
16	GDC065M380D5FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-220F	SiC MOSFET
17	GDC065M480E2FC	650	N	8.8	6.8	0/15	2.7	-	3.85	437	568	406	-	TO-252	SiC MOSFET
18	GDC065M480D5FC	650	N	8.8	6.8	0/15	2.7	-	3.8	437	568	406	-	TO-220F	SiC MOSFET
19	GDC065M600E2FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-252	SiC MOSFET
20	GDC065M600D5FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-220F	SiC MOSFET
21	GCC065M1K0E2FC	650	N	6	4	0/18	2.7	-	4.5	1000	1250	773	-	TO-252	SiC MOSFET
22	GCC065M1K0D5FC	650	N	4.8	3.4	0/18	2.7	-	4.5	1000	1300	773	-	TO-220F	SiC MOSFET
23	GDC075N026F3EB	750	N	72	51	-5/18	2	2.96	4	26.2	34.1	33.6	-	TO-247-3	SiC MOSFET

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		Vth			RDS(ON) TJ= 25℃		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	Min	Type	Max	Type (mΩ)	Max(mΩ)	Package	Product
1	GDS060J600E2BC	600	N	8	5.1	2.5	3.5	4.5	528	600	TO-252	SJ MOSFET
2	GDS060J600D5BC	600	N	8	5	2.5	3.5	4.5	528	600	TO-220F	SJ MOSFET
3	GDS060J380E2BC	600	N	11	6.9	2	3	4	330	380	TO-252	SJ MOSFET
4	GDS060J380D5BC	600	N	11	6.9	2	3	4	330	380	TO-220F	SJ MOSFET
5	GDS070J380D5BC	700	N	10.6	6.7	2	3	4	340	380	TO-220F	SJ MOSFET
6	GDS060R190D5BC	600	N	20	12.6	3	4	5	165	190	TO-220F	SJ MOSFET
7	GDS060S170E2EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-252	SJ MOSFET
8	GDS060S170D5EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-220F	SJ MOSFET
9	GDS060J120D5EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-220F	SJ MOSFET
10	GDS060J120F3EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-247-3	SJ MOSFET
11	GDS060R090D5EC	600	N	31	20	3	4	5	86	99	TO-220F	SJ MOSFET
12	GDS060R090C2EC	600	N	31	20	3	4	5	86	99	TO-263	SJ MOSFET
13	GDS060R090F3EC	600	N	31	20	3	4	5	86	99	TO-247-3	SJ MOSFET
14	GDS060R090T8EC	600	N	31	20	3	4	5	86	99	TOLL-8	SJ MOSFET
15	GDS060R070D5EC	600	N	44	27.7	3	4	5	63	70	TO-220F	SJ MOSFET
16	GDS060R070F3EC	600	N	44	27.7	3	4	5	63	70	TO-247-3	SJ MOSFET
17	GDS060R038F3EC	600	N	52	32.8	3	4	5	34	38	TO-247-3	SJ MOSFET
18	GDS060R022F3EC	600	N	110	69.5	3	4	5	21	22	TO-247-3	SJ MOSFET
19	GDS065S380D5BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-220F	SJ MOSFET
20	GDS065S380E2BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-252	SJ MOSFET
21	GDS065S280E2BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-252	SJ MOSFET
22	GDS065S280D5BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-220F	SJ MOSFET
23	GDS065J190D5EC	650	N	18	11.3	2.5	3.5	4.5	169	190	TO-220F	SJ MOSFET