In a wide range of applications—including electric‑motorcycle chargers, LED drivers, two‑wheel electric vehicles, industrial power supplies, chargers, and high‑end PC power supplies—high‑efficiency AC‑DC power supplies serve as the core component for achieving efficient electrical energy conversion. A typical AC‑DC power supply employs a two‑stage architecture: a PFC boost stage followed by an LLC resonant power stage. The front‑end PFC circuit uses a boost inductor and a switching transistor (Q1) to correct the power factor and stabilize the high‑voltage DC bus; the rear‑end LLC resonant converter, driven by primary‑side switches (Q2/Q3) and a high‑frequency transformer, provides efficient isolated conversion and delivers a stable DC output voltage (Vo). In this architecture, the selection of the PFC switch and the LLC primary‑side switches directly determines the power supply’s conversion efficiency, power density, and EMI performance.

Guangxin Chuangyu Power Device Solutions:

To meet the design requirements of AC‑DC power supplies for high frequency, high efficiency, and high power density, Guangxin Chuangyu offers two major product families: 650 V SiC MOSFETs and 600 V/650 V Super Junction MOSFETs. These cover the critical power‑device roles in both the PFC boost stage and the LLC resonant power stage, providing a device‑level upgrade path—from silicon to silicon carbide—for high‑efficiency applications across all scenarios.

I. Topology Analysis: Application Locations of SiC/SJ Devices

Based on the core AC‑DC power supply topology shown above, the placement of power devices is as follows:

Topological location	Device Type	Function Description
PFC boost-stage switching transistor (Q1)	SiC MOSFET / SJ MOSFET	Power factor correction boosts the rectified pulsating DC to a stable high‑voltage bus, while the ultra‑fast switching speed and low on‑state losses of SiC MOSFETs significantly reduce switching losses.
PFC boost-stage diode	SiC SBD (recommended)	Zero reverse recovery, reducing switching losses and EMI noise in the PFC stage.
LLC resonant power stage primary-side switching transistors (Q2/Q3)	SiC MOSFET / SJ MOSFET	It forms a half-bridge LLC resonant network, converting high‑voltage DC into high‑frequency AC; the excellent reverse‑recovery characteristics of the SiC MOSFET perfectly match the LLC’s ZVS soft‑switching requirements.
LLC secondary-side rectifier diode	SiC SBD (recommended)	The high-frequency AC on the transformer secondary side is rectified into a DC output, and the zero reverse-recovery characteristics of the SiC SBD significantly reduce rectification losses.
Typical applications: AC input (L/N) → Rectifier bridge → PFC boost stage (SiC/SJ MOSFET + SiC SBD) → High‑voltage busbar → LLC resonant power stage (SiC/SJ MOSFET) → High‑frequency transformer → Secondary‑side rectification (SiC SBD) → DC output (Vo)

II. Core Advantages of SiC MOSFETs (Third-Generation G3 Silicon Carbide Technology)

Lower Losses: Featuring reduced gate charge (Qg) and total losses, the FOM (figure of merit, Qg × Rds(on)) outperforms the industry average by 14%, significantly reducing switching losses at high frequencies.

Drive Compatibility: Supports 15V/18V drive voltages and is designed for existing power‑drive systems, enabling the full performance of SiC without requiring an upgrade to the driver IC, while optimizing BOM costs.

Higher Frequency: Supports higher switching frequencies, effectively reducing the size of the PFC inductor, LLC transformer, and output filter capacitors, thereby enabling smaller power supplies with higher power density.

Improved EMI Performance: The SiC MOSFET’s superior body‑diode reverse‑recovery characteristics reduce oscillations and voltage spikes during switching, resulting in enhanced system EMI performance.

III. Core Advantages of Super Junction MOSFETs

Low conduction losses: Ultra-low Rds(on) effectively reduces conduction losses and maintains a low temperature rise under heavy-load conditions.

Fast Switching: Optimized gate charge and switching speed, tailored for high-frequency PFC and LLC applications.

Flexible packaging: Available in multiple package options, including TO‑220F (insulated) and TO‑247 (high‑current), to meet diverse thermal‑management and power‑handling requirements.

High cost-effectiveness: While delivering excellent energy efficiency, it offers a more cost‑competitive solution, making it ideal for AC‑DC power supply designs that prioritize overall value.

IV. High-Efficiency Applications Covering All Scenarios

Application scenarios	Recommended Device Series	Key Considerations
High-end PC power supply	650V SiC MOSFET (GCC065N Series)	Achieving titanium‑grade efficiency, with low Qg to reduce drive losses.
Industrial power supply	650V SiC / SJ MOSFET	Balances efficiency and reliability, with ample voltage margin.
Electric motorcycle charger	650V SiC / SJ MOSFET	High efficiency, compact size, and suitable for in-vehicle environments.
LED driver	600V/650V SJ MOSFET	Cost-effectiveness first, with solid performance.
Two-wheeled electric vehicle charger	600V/650V SJ MOSFET	Mature solution, with flexible packaging and easy deployment.

V. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Efficiency improvements are difficult, and losses are significant.	Efficiency can exceed 96%, with a FOM that leads the industry by 14%.
Frequency	Typically ≥65 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	SiC body diodes exhibit excellent characteristics and superior EMI performance.
Drive	Requires a dedicated driver chip.	Compatible with 15V/18V drivers—no driver upgrade required.
Temperature rise	Significant heat generation; a large heatsink is required.	Low losses, low temperature rise, and simplified heat dissipation.
BOM cost	High drive and thermal management costs	Driver compatibility and simplified thermal management, with overall cost optimization.

Solution Topology

Model Recommendations

NO.	Part Number	Package	You all min (V)	Id (A) 25℃	Vth (V)			Rds(on)(mΩ)		Product
					Vth (V)			at VGS= 18V
					min	type	max	type	max
1	GDC065M180D5FB	TO-220F	650	19.5	3.2	3.9	5.0	129	167	SiC MOSFET
2	GDC065M180F3FB	TO-247	650	19.5	3.2	3.9	5.0	129	167	SiC MOSFET
3	GDC065M100D5FB	TO-220F	650	30	2.6	3.6	4.6	100	130	SiC MOSFET
4	GDC065M100F3FB	TO-247	650	30	2.6	3.6	4.6	100	130	SiC MOSFET
5	GCC065N080D5EB	TO-220F	650	37	2.0	3.0	4.0	80	104	SiC MOSFET
6	GCC065N080F3EB	TO-247	650	37	2.0	3.0	4.0	80	104	SiC MOSFET
7	GCC065N060D5EB	TO-220F	650	43	2.5	3.1	3.9	56	73	SiC MOSFET
8	GCC065N060F3EB	TO-247	650	43	2.5	3.1	3.9	56	73	SiC MOSFET

Model Recommendations

NO.	Part Number	Package	You all min (V)	Id (A) 25℃	Vth (V)			Rds(on) (mΩ)		Product
					Vth (V)			at VGS = 10V
					min	type	max	type	max
1	GDS060R120D5EB	TO-220F	600	26	2.5	3.5	4.5	108	120	SJ MOSFET
2	GDS060R120F3EB	TO-247	600	26	2.5	3.5	4.5	108	120	SJ MOSFET
3	GDS060R099D5EB	TO-220F	600	31	3.0	4.0	5.0	89	99	SJ MOSFET
4	GDS060R099F3EB	TO-247	600	31	3.0	4.0	5.0	89	99	SJ MOSFET
5	GDS060R070D5EB	TO-220F	600	44	3.0	4.0	5.0	63	70	SJ MOSFET
6	GDS060R070F3EB	TO-247	600	48	3.0	4.0	5.0	63	70	SJ MOSFET
7	GDS065R120D5EB	TO-220F	650	26	2.5	3.5	4.5	108	120	SJ MOSFET
8	GDS065R120F3EB	TO-247	650	26	2.5	3.5	4.5	108	120	SJ MOSFET
9	GDS065R099D5EB	TO-220F	650	31	3.0	4.0	5.0	89	99	SJ MOSFET
10	GDS065R099F3EB	TO-247	650	31	3.0	4.0	5.0	89	99	SJ MOSFET
11	GDS065R070D5EB	TO-220F	650	44	3.0	4.0	5.0	63	70	SJ MOSFET
12	GDS065R070F3EB	TO-247	650	44	3.0	4.0	5.0	63	70	SJ MOSFET