Against the backdrop of the booming new‑energy vehicle industry, the on‑board charger (OBC) serves as a core power‑conversion device that bridges the grid and the traction battery. Its power density, conversion efficiency, and bidirectional energy‑exchange capabilities have become key metrics for evaluating overall vehicle performance. Modern OBC systems typically employ a two‑stage cascaded AC/DC–DC/DC architecture, supporting bidirectional energy‑interaction functions such as V2G (vehicle‑to‑grid) and V2L (vehicle‑to‑load), thereby enabling a leap‑forward evolution from “unidirectional charging” to “energy‑interactive operation.”

Guangxin Chuangyu SiC Power Device Solutions:

To meet the high‑voltage, high‑frequency, and high‑efficiency requirements of OBC applications, Guangxin Chuangyu offers a full‑range portfolio of 650 V and 1200 V SiC MOSFETs, covering the critical power‑device positions in both bidirectional totem‑pole PFCs and three‑phase interleaved CLLC resonant two‑stage converters, thereby providing highly reliable, high‑efficiency power‑management solutions for the entire vehicle.

I. Topology Diagram Analysis: Application Locations of SiC Devices

Level 1: Bidirectional Totem-Pole Converter (AC/DC Stage)

Topological location	Device Type	Function Description
High-frequency bridge arm switching devices (S1/S2)	SiC MOSFET	The high-frequency bridge arm of the totem-pole PFC achieves sinusoidal grid-side current and unity power factor control, while the ultra-fast switching speed of SiC MOSFETs significantly reduces switching losses.
Power-frequency bridge arm switching devices (S3/S4)	SiC MOSFET	The line-frequency bridge arms that constitute the totem-pole PFC enable current path switching, while the low on-resistance of the SiC MOSFETs reduces conduction losses.
Boost inductor (L)	—	Energy storage and filtering, combined with a high-frequency bridge arm, enable boost conversion.
Output bus capacitor (Cbus)	—	Stabilizes the high-voltage DC bus voltage, providing a steady input to the downstream DC‑DC converter.
Topological advantage: The bidirectional totem-pole PFC replaces the conventional diode rectifier bridge with SiC MOSFETs, significantly reducing conduction and reverse-recovery losses while enabling bidirectional power flow, thereby laying the groundwork for V2G and V2L functionalities.

Level 2: Three-phase Interleaved CLLC Resonant Converter (DC/DC Stage)

Topological location	Device Type	Function Description
Primary-side full-bridge switching transistors (Q1–Q6, three-phase)	SiC MOSFET	It constitutes a three-phase interleaved full-bridge inverter, converting high‑voltage DC into high‑frequency AC to drive the primary side of the transformer. The fast switching of SiC MOSFETs, combined with their excellent body diode characteristics, ensures ZVS soft switching.
Primary-side resonant network (Lr/Cr/Lm)	—	It forms the CLLC resonant cavity, enabling zero-voltage switching (ZVS) for the primary-side switch and zero-current switching (ZCS) for the secondary-side rectifier.
High-frequency transformers (T1/T2/T3, three-phase)	—	Achieves electrical isolation and voltage matching; the three-phase interleaved topology reduces input/output current ripple.
Secondary-side full-bridge switching transistors (Q7–Q12, three-phase)	SiC MOSFET	It constitutes a full-bridge rectifier/inverter on the secondary side, converting the high-frequency AC from the transformer’s secondary winding into DC and enabling bidirectional energy flow.
Output filter capacitor (Co)	—	Smooths the DC output voltage, providing a stable charging voltage for the power battery.
Topological advantage: The three-phase interleaved CLLC resonant topology effectively reduces input and output current ripple through interleaving while enabling zero-voltage switching (ZVS) and zero-current switching (ZCS) for both primary- and secondary-side switches, making it a key component for achieving high-efficiency power conversion in bidirectional on-board chargers.

II. The Core Value of SiC Devices in On-Board Chargers

Higher Efficiency: The SiC MOSFET’s extremely low on-resistance and gate charge, combined with its excellent body‑diode reverse‑recovery characteristics, significantly reduces losses in both the totem‑pole PFC stage and the CLLC resonant stage, boosting the OBC’s overall efficiency (up to 96%+) and shortening charging times.

Higher power density: Supports higher switching frequencies, effectively reducing the size of PFC inductors, CLLC resonant components, and transformers, thereby enabling compact, lightweight OBC designs that meet the demands of tight automotive spaces.

Lower EMI: The SiC MOSFET’s excellent body‑diode reverse‑recovery characteristics and fast switching speed reduce oscillations and voltage spikes during switching, resulting in improved system EMI performance and simplifying filter circuit design.

Higher Reliability: SiC materials can withstand higher junction operating temperatures (175°C+), delivering more stable performance in harsh automotive environments characterized by high temperatures and vibration, thereby extending the service life of the OBC.

Bidirectional Power Exchange: The fast switching and low-loss characteristics of SiC MOSFETs perfectly support bidirectional power flow across the entire G2V (Grid-to-Vehicle), V2G (Vehicle-to-Grid), and V2L (Vehicle-to-Load) chain.

III. Summary of the Plan’s Value

Dimension	Traditional silicon-based solution	Guangxin Chuangyu SiC Solution
Efficiency	Efficiency improvements are difficult, and losses are significant.	Efficiency can exceed 96%, reducing charging time.
Frequency	Typically <50 kHz	Supports higher frequencies, with reduced magnetic component size.
EMI	Requires a complex absorption circuit.	The SiC MOSFET’s body diode exhibits excellent characteristics, with even better EMI performance.
Temperature rise	Significant heat generation, requiring a large heatsink.	Low losses, low temperature rise, and simplified heat dissipation.
Reliability	Performance degradation at high temperatures	Stable operation at 175°C+, suitable for harsh automotive environments.
Two-way functionality	Bidirectional implementation is complex and inefficient.	Naturally supports bidirectional energy flow across the entire G2V/V2G/V2L value chain.

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC065N020F3EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23	-	TO-247-3	SiC MOSFET
2	GCC065N020F4EB	650	N	120	100	0/18	2.7	-	4.5	20	26	23		TO-247-4	SiC MOSFET
3	GCC065N040F3EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46		TO-247-3	SiC MOSFET
4	GCC065N040F4EB	750	N	68	48	-5/18	2.5	3.1	3.9	36	47	46	-	TO-247-4	SiC MOSFET
5	GCC065N060D5EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80	-	TO-220F	SiC MOSFET
6	GCC065N060F3EB	750	N	43	25	-5/18	2.5	3.1	3.4	56	60	80		TO-247-3	SiC MOSFET
7	GCC065M090F3EB	650	N	36	27	0/18	2.7	-	4.5	90	120	77	-	TO-247-3	SiC MOSFET
8	GCC065M090D5EB	650	N	25	17.7	0/15	2.6	-	4.6	90	120	82	-	TO-220F	SiC MOSFET
9	GCC065M100F3EB	750	N	31.9	22.6	0/18	2.6	-	4.6	100	130	98	-	TO-247-3	SiC MOSFET
10	GCC065M100D5EB	750	N	20.1	14.1	0/18	2.6	-	4.6	100	130	98	-	TO-220F	SiC MOSFET
11	GDC065M180E2FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-252	SiC MOSFET
12	GDC065M180D5FC	650	N	19	13.5	0/15	2.8	-	3.9	187	215	175	-	TO-220F	SiC MOSFET
13	GDC065M260E2FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-252	SiC MOSFET
14	GDC065M260D5FC	650	N	15.5	11	0/15	2.9	-	5	260	300	231	-	TO-220F	SiC MOSFET
15	GDC065M380E2FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-252	SiC MOSFET
16	GDC065M380D5FC	650	N	10	7.5	0/15	2.5	-	3.7	313	440	336	-	TO-220F	SiC MOSFET
17	GDC065M480E2FC	650	N	8.8	6.8	0/15	2.7	-	3.85	437	568	406	-	TO-252	SiC MOSFET
18	GDC065M480D5FC	650	N	8.8	6.8	0/15	2.7	-	3.8	437	568	406	-	TO-220F	SiC MOSFET
19	GDC065M600E2FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-252	SiC MOSFET
20	GDC065M600D5FC	650	N	7	5.7	0/15	2.7	-	3.8	500	650	509	-	TO-220F	SiC MOSFET
21	GCC065M1K0E2FC	650	N	6	4	0/18	2.7	-	4.5	1000	1250	773	-	TO-252	SiC MOSFET
22	GCC065M1K0D5FC	650	N	4.8	3.4	0/18	2.7	-	4.5	1000	1300	773	-	TO-220F	SiC MOSFET
23	GDC075N026F3EB	750	N	72	51	-5/18	2	2.96	4	26.2	34.1	33.6	-	TO-247-3	SiC MOSFET
24	GCC120N010F4EB	1200	N	113	80	-5/18	2	2.7	4	14.5	19	27	-	TO-247-4	SiC MOSFET
25	GCC120N030F3EB	1200	N	55	39	-5/18	2	-	4	30	40	54	-	TO-247-3	SiC MOSFET
26	GCC120N030F4EB	1200	N	55	39	-5/18	2	-	4	30	40	54	-	TO-247-4	SiC MOSFET
27	GCC120N035F3EB	1200	N	47	33	-5/18	2	-	4	35	45	65	-	TO-247-3	SiC MOSFET
28	GCC120N035F4EB	1200	N	47	33	-5/18	2	-	4	35	45	65	-	TO-247-4	SiC MOSFET
29	GCC120N060F4EB	1200	N	34	24	-5/18	2	-	4	56	78	108	-	TO-247-4	SiC MOSFET
30	GCC120N075F3FB	1200	N	39	28	-5/18	2	-	4	58	75	104	-	TO-247-3	SiC MOSFET
31	GCC120N075F4FB	1200	N	39	28	-5/18	2	-	4	58	75	104	-	TO-247-4	SiC MOSFET
32	GCC150N020F4EB	1500	N	86	61	-5/18	2	3.3	4	20	25	36.4	-	TO-247-4	SiC MOSFET

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		Vth			RDS(ON) TJ= 25℃		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	Min	Type	Max	Type (mΩ)	Max(mΩ)	Package	Product
1	GDS060J600E2BC	600	N	8	5.1	2.5	3.5	4.5	528	600	TO-252	SJ MOSFET
2	GDS060J600D5BC	600	N	8	5	2.5	3.5	4.5	528	600	TO-220F	SJ MOSFET
3	GDS060J380E2BC	600	N	11	6.9	2	3	4	330	380	TO-252	SJ MOSFET
4	GDS060J380D5BC	600	N	11	6.9	2	3	4	330	380	TO-220F	SJ MOSFET
5	GDS070J380D5BC	700	N	10.6	6.7	2	3	4	340	380	TO-220F	SJ MOSFET
6	GDS060R190D5BC	600	N	20	12.6	3	4	5	165	190	TO-220F	SJ MOSFET
7	GDS060S170E2EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-252	SJ MOSFET
8	GDS060S170D5EC	600	N	19	11.2	2.5	3.5	4.5	151	170	TO-220F	SJ MOSFET
9	GDS060J120D5EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-220F	SJ MOSFET
10	GDS060J120F3EC	600	N	26	16.5	2.5	3.5	4.5	108	120	TO-247-3	SJ MOSFET
11	GDS060R090D5EC	600	N	31	20	3	4	5	86	99	TO-220F	SJ MOSFET
12	GDS060R090C2EC	600	N	31	20	3	4	5	86	99	TO-263	SJ MOSFET
13	GDS060R090F3EC	600	N	31	20	3	4	5	86	99	TO-247-3	SJ MOSFET
14	GDS060R090T8EC	600	N	31	20	3	4	5	86	99	TOLL-8	SJ MOSFET
15	GDS060R070D5EC	600	N	44	27.7	3	4	5	63	70	TO-220F	SJ MOSFET
16	GDS060R070F3EC	600	N	44	27.7	3	4	5	63	70	TO-247-3	SJ MOSFET
17	GDS060R038F3EC	600	N	52	32.8	3	4	5	34	38	TO-247-3	SJ MOSFET
18	GDS060R022F3EC	600	N	110	69.5	3	4	5	21	22	TO-247-3	SJ MOSFET
19	GDS065S380D5BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-220F	SJ MOSFET
20	GDS065S380E2BC	650	N	10.6	6.7	2.5	3.5	4.5	334	380	TO-252	SJ MOSFET
21	GDS065S280E2BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-252	SJ MOSFET
22	GDS065S280D5BC	650	N	13.8	8.7	2.5	3.5	4.5	246	280	TO-220F	SJ MOSFET
23	GDS065J190D5EC	650	N	18	11.3	2.5	3.5	4.5	169	190	TO-220F	SJ MOSFET