Against the backdrop of rapid advancements in next-generation power systems and industrial automation, solid-state circuit breakers (SSCBs), as next‑generation protective devices poised to replace conventional mechanical circuit breakers, are increasingly being deployed in applications such as DC microgrids, energy storage systems, data center power supplies, and industrial control. Compared with traditional mechanical circuit breakers, SSCBs leverage power semiconductor devices to switch current on and off, offering key advantages including sub‑microsecond interruption times, arc‑free operation, zero contact wear, and high reliability—making them essential components for building smart, secure, and efficient power systems.

A typical SSCB employs an architecture comprising a main current‑carrying branch, an energy‑absorbing branch, and a control‑drive circuit: the main branch is built from SiC MOSFETs and handles normal conduction as well as fault‑current interruption; the energy‑absorbing branch (e.g., TVS diodes or varistors) dissipates the inductive‑load energy generated during switching; and the control‑drive circuit, implemented by an MCU, performs overcurrent detection and rapid turn‑off. In this architecture, the selection of the main‑current SiC MOSFET directly determines the SSCB’s on‑state losses, interruption speed, and reliability.

Guangxin Chuangyu SiC Power Device Solutions:

To meet the design requirements of SSCBs—low on-state losses, microsecond‑level interruption, and high reliability—Guangxin Chuangyu offers a family of SiC MOSFETs that cover the critical power‑device positions in the main current‑carrying branch of the SSCB, helping to enable faster, more compact, and more reliable solid‑state circuit breaker designs.

I. Topology Diagram Analysis: Application Locations of SiC Devices

Based on the SSCB solid-state circuit breaker topology shown above, the application locations of SiC devices are as follows:

Topological location	Device Type	Function Description
Main current‑carrying switching transistor (left‑side SiC MOSFET)	SiC MOSFET	The core switch that forms the main current‑carrying branch conducts load current under normal operation and rapidly turns off in the event of a fault to interrupt the current. The SiC MOSFET’s extremely low on‑state resistance significantly reduces conduction losses, while its ultra‑fast switching speed enables interruption within microseconds.
Disconnect/Isolation Switch Module (Right-Side SiC MOS)	SiC MOSFET	In conjunction with the main current‑carrying switch, it achieves fault‑current interruption and isolation, ensuring complete circuit disconnection after interruption and enhancing safety.
Energy absorption branch	TVS/varistor	Absorbs the energy generated by inductive loads at the moment of turn-off, suppresses voltage spikes, and protects the SiC MOSFET.
Control Drive Circuit (MCU)	—	It implements overcurrent detection, fault diagnosis, and fast shutdown control, driving the SiC MOSFET to execute a disconnect operation.
Mechanical isolating switch (right side)	—	Provides physical isolation breakpoints to ensure maintenance safety (optional).
Typical applications: N/L+ input → Main current‑carrying branch (SiC MOSFET) → Current sensing → Disconnect/Isolation branch (SiC MOSFET) → Output L0

II. The Core Value of SiC Devices in SSCB

Microsecond‑level interruption speed: SiC MOSFETs switch extremely rapidly, enabling fault current interruption within microseconds—far faster than the millisecond‑level response of conventional mechanical circuit breakers. This effectively limits fault current peaks and protects downstream equipment.

Extremely low conduction losses: The SiC MOSFET’s exceptionally low on‑state resistance (Rds(on)) results in minimal conduction losses under normal operating conditions, reducing heat generation and enhancing the long-term operational reliability and lifespan of the SSCB.

Arc-free and contact‑wear‑free: Utilizing semiconductor‑based switching, it features no mechanical contacts, eliminates arc formation during interruption, prevents contact wear, offers a long service life, and requires no maintenance.

Higher reliability: SiC materials can withstand higher junction operating temperatures (175°C+), delivering more stable performance in harsh environments such as high temperature, high humidity, and vibration, making them well-suited for industrial and outdoor applications.

Higher power density: Supports higher switching frequencies and lower on-resistance, effectively reducing heatsink size and enabling compact, modular designs for SSCBs.

III. Summary of the Plan’s Value

Dimension	Traditional mechanical circuit breaker	Guangxin Chuangyu SiC SSCB Solution
Breaking speed	Millisecond-level (ms)	Microsecond-level (μs), 1,000 times faster
Electric arc	An arc is present; an arc-extinguishing device is required.	No arc, no arc-quenching required.
Contact wear	Wear and tear, limited lifespan.	Contactless, long lifespan, maintenance-free
On-state loss	Low contact resistance and low losses.	SiC MOSFETs feature extremely low Rds(on), resulting in minimal losses.
Reliability	The mechanical structure is complex, and its reliability is limited.	Semiconductor devices with high reliability.
Power density	Large volume, difficult to integrate.	Small size, easy to integrate into modular systems.
Environmental adaptability	Highly susceptible to vibration and humidity.	Resistant to high temperature, high humidity, and vibration

Solution Topology

Model Recommendations

No.	Part No.	VDSS (V)	Type	ID(A)		VGSS-OP (V)	VGS-TH (V)			RDS(ON)(TJ=25℃)		RDS(ON)(TJ=175℃)		Package	Product
No.	Part No.	VDSS (V)	Type	TC=25℃	TC=100℃	VGSS-OP (V)	Min	Type	Max	Type (mΩ)	Max (mΩ)	Type (mΩ)	Max (mΩ)	Package	Product
1	GCC120N010F4EB	1200	N	113	80	-5/18	2	2.7	4	14.5	19	27	-	TO-247-4	SiC MOSFET
2	GCC120N030F3EB	1200	N	55	39	-5/18	2	-	4	30	40	54	-	TO-247-3	SiC MOSFET
3	GCC120N030F4EB	1200	N	55	39	-5/18	2	-	4	30	40	54	-	TO-247-4	SiC MOSFET
4	GCC120N035F3EB	1200	N	47	33	-5/18	2	-	4	35	45	65	-	TO-247-3	SiC MOSFET
5	GCC120N035F4EB	1200	N	47	33	-5/18	2	-	4	35	45	65	-	TO-247-4	SiC MOSFET
6	GCC120N060F4EB	1200	N	34	24	-5/18	2	-	4	56	78	108	-	TO-247-4	SiC MOSFET
7	GCC120N075F3FB	1200	N	39	28	-5/18	2	-	4	58	75	104	-	TO-247-3	SiC MOSFET
8	GCC120N075F4FB	1200	N	39	28	-5/18	2	-	4	58	75	104	-	TO-247-4	SiC MOSFET
9	GCC150N020F4EB	1500	N	86	61	-5/18	2	3.3	4	20	25	36.4	-	TO-247-4	SiC MOSFET
10	GAC170N015F4EB	1700	N	153	108	-5/18	2	2.9	4	15	21	27	-	TO-247-4	SiC MOSFET
11	GYC170N1K0F3BB	1700	N	5	3.2	-5/20	2	3.1	4	1060	1350	998	1250	TO-247-3	SiC MOSFET
12	GYC170N1K0F4BB	1700	N	5	3.2	-5/20	2	3.1	4	1060	1350	2100	-	TO-247-4	SiC MOSFET
13	GYC170N019F3BB	1700	N	132	84	-5/20	2	2.75	4	19	28	46	-	TO-247-3	SiC MOSFET
14	GYC170N019F4BB	1700	N	132	84	-5/20	2	2.8	4	19	26	26	-	TO-247-4	SiC MOSFET
15	GYC170N045F3BB	1700	N	67	45	-5/20	2	2.8	4	45	70	78	-	TO-247-3	SiC MOSFET
16	GYC170N045F4BB	1700	N	67	45	-5/20	2	2.8	4	45	70	78	-	TO-247-4	SiC MOSFET
17	GYC170N075F3BB	1700	N	33	29	-5/20	2	2.9	4	75	95	186	-	TO-247-3	SiC MOSFET
18	GYC170N075F4BB	1700	N	33	29	-5/20	2	2.5	4	75	95	105	-	TO-247-4	SiC MOSFET