Product Intelligent Selection Tool-GXCY-SEMI

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More than competitive capacity, cost and quality

One-stop product supply assurance, meeting diverse application scenarios.
Wide variety, comprehensive product lineup, superior performance

Silicon Carbide MOSFET (SiC MOSFET)

Breaking through the physical limits of silicon-based technology, the core engine for high frequency, high power, and lightweight design.

Product Advantages

Achieves extremely low conduction and switching losses. Leveraging advanced wafer‑ and die‑sorting technologies, it delivers outstanding consistency in key device parameters—such as the threshold voltage (Vth)—significantly reducing the challenges of die selection for parallel‑device configurations and module packaging.

Product Features

Ultra-fast switching: unipolar device characteristics, no tail current, sharply reduced turn-off losses, and support for high-frequency operation.
High-Temperature Tolerance: The maximum junction temperature reaches 175°C, and the threshold voltage (Vth) exhibits excellent stability at elevated temperatures, thereby relaxing thermal‑management constraints.

Product Applications

Main drive inverters for new-energy vehicles, on-board chargers (OBC), high-power string-type photovoltaic inverters, and high‑power‑density server power supplies (CRPS).

Product Customization

We accept custom orders. For product customization, please contact us.

Silicon Carbide Diode SBD (SiC Schottky Barrier Diode)

Zero reverse recovery loss— the golden partner that, in tandem with the switching transistor, elevates system efficiency.

Product Advantages

As a multi‑channel power device, it fully addresses the pain point of hard switching during reverse recovery. When operated in conjunction with a MOSFET, it significantly suppresses turn‑on spikes and voltage overshoots, thereby substantially reducing the turn‑on losses of the switching transistor.

Product Features

Transient zero loss: No minority-carrier storage effect; reverse recovery charge (Qrr) approaches zero, and the reverse recovery time (trr) is typically less than 20 ns.
Static high reliability: Featuring an optimized forward voltage drop (VF) and ultra‑low reverse leakage current, it effectively mitigates the risk of thermal runaway at elevated temperatures.

Product Applications

Photovoltaic inverters (MPPT circuits), on-board chargers for new-energy vehicles, high-frequency industrial power supplies, and high-performance server/communication power supplies.

Product Customization

We accept custom orders. For product customization, please contact us.

Super Junction MOSFET

A mature, high-efficiency solution that balances low conduction losses with excellent EMI margin.

Product Advantages

Based on a mature and stable super-junction process, optimized cell‑pitch design yields smoother switching waveforms, significantly reducing the complexity of system EMI mitigation.

Product Features

Low Loss: Extremely low junction capacitances (Ciss / Coss), significantly reducing high-frequency switching and drive losses.
High reliability: Features robust avalanche‑resistant (EAS) performance and high dv/dt withstand capability.

Product Applications

High-efficiency AC-DC switching power supplies, PFC circuits, LED driver power supplies, UPS systems, and residential photovoltaic inverters.

Product Customization

We accept custom orders. For product customization, please contact us.

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