SiC MOSFET
Breaking through the physical limits of silicon-based technology, the core engine for high frequency, high power, and lightweight design.
Product Advantages
Achieves extremely low conduction and switching losses. Leveraging advanced wafer‑ and die‑sorting technologies, it delivers outstanding wafer‑level parameter uniformity—such as Vth threshold voltage—significantly reducing the challenges of die selection in parallel‑device configurations and module packaging.
Product Features
Ultra-fast switching: unipolar device characteristics, no tail current, sharply reduced turn-off losses, and support for high-frequency operation.
High-Temperature Tolerance: The maximum junction operating temperature reaches 175°C, and the threshold voltage (Vth) exhibits excellent stability at elevated temperatures, thereby relaxing thermal‑management constraints.
Product Applications
Main drive inverters for new-energy vehicles, on-board chargers (OBC), high-power string-type photovoltaic inverters, and high‑power‑density server power supplies (CRPS).
Product Customization
Accepting customer customization, Welcome to call: Engineer Li, 130 3889 3770.
Quick Filter
Part Number
Date Sheet
VDSS
(V)
ID(A)
TC=25℃
ID(A)
TC=100℃
VGSS-OP
(V)
VGS-TH
(V)
Min
VGS-TH
(V)
Max
RDS(ON)
(TJ=25℃)
Type (mΩ)
RDS(ON)
(TJ=25℃)
Max(mΩ)
RDS(ON)
(TJ=175℃)
Type (mΩ)
Package
Inquiry
Product Inquiry:
130 3889 3770
Email:
Headquarters Address:
18th Floor, Building B, Gaoke Jinhui Tower, High-Tech Industrial Development Zone, Xuzhou City, Jiangsu Province
Sales Center Address:
24th Floor, Building A, Phoenix Smart Valley, Xixiang Subdistrict, Bao’an District, Shenzhen, Guangdong Province
WeChat Account
Douyin
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