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SiC MOSFET

SiC MOSFET

Breaking through the physical limits of silicon-based technology, the core engine for high frequency, high power, and lightweight design.

 Product Advantages

Product Advantages

Achieves extremely low conduction and switching losses. Leveraging advanced wafer‑ and die‑sorting technologies, it delivers outstanding wafer‑level parameter uniformity—such as Vth threshold voltage—significantly reducing the challenges of die selection in parallel‑device configurations and module packaging.

 Product Features

Product Features

Ultra-fast switching: unipolar device characteristics, no tail current, sharply reduced turn-off losses, and support for high-frequency operation.
High-Temperature Tolerance: The maximum junction operating temperature reaches 175°C, and the threshold voltage (Vth) exhibits excellent stability at elevated temperatures, thereby relaxing thermal‑management constraints.

 Product Applications

Product Applications

Main drive inverters for new-energy vehicles, on-board chargers (OBC), high-power string-type photovoltaic inverters, and high‑power‑density server power supplies (CRPS).

 Product Customization

Product Customization

Accepting customer customization, Welcome to call: Engineer Li, 130 3889 3770.

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Quick Filter

VDSS (V)
ID(A) TC=25℃
VGS-TH (V) Min
VGS-TH (V) Max
RDS(ON) (TJ=25℃) Typical (mΩ)
Package
condition: clear condition

Part Number

Date Sheet

VDSS

(V)

ID(A)

TC=25℃

ID(A)

TC=100℃

VGSS-OP
(V)

VGS-TH
(V)
Min

VGS-TH
(V)
Max

RDS(ON)
(TJ=25℃)
Type (mΩ)

RDS(ON)
(TJ=25℃)
Max(mΩ)

RDS(ON)
(TJ=175℃)
Type (mΩ)

Package

Inquiry

GCC065M100F3EB

750

31.9

22.6

0/18

2.6

4.6

100

130

98

TO-247-3

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