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Deepen collaborative technological innovation and promote the industrialization and practical application of semiconductor technology achievements.
2021-11-12
As a high‑end, cutting‑edge technology sector, the semiconductor industry is characterized by rapid technological iteration, high R&D barriers, and dense technical entry barriers, making it difficult to achieve swift breakthroughs through independent corporate R&D alone. Collaborative innovation among industry, academia, and research institutions, coupled with the practical application of technological成果, has become the core pathway for accelerating the upgrading of China’s semiconductor industry and achieving technological breakthroughs, while also serving as a critical enabler for the sector’s transition from “R&D” to “industrial implementation.”
Breaking the bottleneck in the supply chain and building independent barriers in niche semiconductor segments.
2021-11-12
In recent years, trade barriers in the global semiconductor industry have intensified. High-end components, core chip solutions, and precision technical services from overseas have long monopolized China’s high-end market, leaving domestic sectors such as electronic manufacturing, industrial control, and telecommunications infrastructure to grapple with persistent challenges: reliance on imported core components, unpredictable supply lead times, soaring procurement costs, and difficulty meeting customized requirements. As a result, achieving supply-chain self-reliance and controllability has become the central issue for the development of China’s semiconductor industry.
Changfeng Alliance Internet Information Services Promotion Working Group
2021-11-09
At present, the domestic semiconductor industry is accelerating its drive toward self-reliance, with the sector’s focus shifting from “mass production and widespread adoption” to a high‑quality development phase centered on refining manufacturing processes, enhancing performance, and improving stability. Conventional general‑purpose semiconductor devices commonly suffer from high high‑frequency losses, large temperature coefficients, inadequate stability under extreme operating conditions, and significant consistency deviations—issues that make them ill‑suited to meet the stringent requirements of high‑end applications such as industrial control systems, high‑frequency communications, and precision smart equipment. Consequently, advancing process technology has become the core strategic imperative for breaking through in China’s domestic semiconductor industry at this stage.
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